 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications * Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150 Units V V V V V V V A A A W C C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V A A A A BVCBO IC = - 100A, IE = 0 ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60 IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Turn ON Time Turn OFF Time * Pulse Test: PW=350s, duty Cycle=2% Pulsed hFE Classificntion Classification hFE1 (c)2000 Fairchild Semiconductor International 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 25 150 ~ 375 Rev. A, February 2000 BD376/378/380 Typical Characteristics 100 -500 80 VCE(sat)(mV), SATURATION VOLTAGE VCE = -2V -400 hFE, DC CURRENT GAIN IC = 20.IB 60 -300 40 -200 20 -100 IC = 10.IB 0 -10 -100 -1000 -0 -1E-3 -0.01 -0.1 -1 -10 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -1.1 -10 VBE(V), BASE EMITTER VOLTAGE -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.1 IC[A], COLLECTOR CURRENT t) (sa V BE 10.IB c= I ICMAX. (Continuous) -1 S/b VBE(on) VCE = -5V LIM D ITE -0.1 -0.01 -0.1 -1 -10 -1 -10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 40 35 PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 0 25 50 o 75 100 125 150 175 200 Tc[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International BD376 BD378 BD380 VCEO MAX. -100 Rev. A, February 2000 BD376/378/380 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
Price & Availability of BD380
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |